Organization : National Institute of Technology (NIT) Silchar.
Name of the position : Research Associate (Electronics)
Last Date: 23rd February, 2018
Department: Electronics and Communication Engineering.
Title of the project: Hetero-Junction Tunnel FETs: Characterization, modelling and simulation of Electrical Parameters.
Title of the project: Hetero-Junction Tunnel FETs: Characterization, modelling and simulation of Electrical Parameters.
Essential qualifications : Ph.D. awarded or Thesis submitted in the area of semiconductor devices OR ME/M.Tech. in relevant area with 3 years of research, teaching and design, and development experience.
No.of Post : 1
Age limit : 35 Years (Maximum)
Salary : Rs. 36,000
Only shortlisted candidates will be intimated through e-mail to appear for the interview.
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